06
May
2022
|
04:04
Europe/Amsterdam

SIT and TCOMS Form Strategic Partnership for Applied Research and to Jointly Nurture Engineering Talent

The MOU will strengthen Singapore’s R&D efforts in sustainable maritime engineering and grow a future talent pool

The Singapore Institute of Technology (SIT) and the Technology Centre for Offshore and Marine, Singapore (TCOMS) have signed a Memorandum of Understanding today to strengthen Research & Development (R&D) collaboration, and grow the talent pool for Singapore’s Maritime, Marine & Offshore Engineering, as well as other ocean sectors.

 

This partnership will involve staff exchanges between the two partners to leverage the talent and expertise in both organisations, in areas such as naval architecture, fluid-structure interaction, as well as maritime autonomy and control. TCOMS will host SIT students on their internships. SIT will also be able to access TCOMS’ R&D facilities, such as its ocean basin facility, for applied research and educational purposes. In addition, TCOMS and SIT will collaborate in applied research projects and events.

Said SIT President, Professor Chua Kee Chaing: “As a university of applied learning, SIT is committed to nurturing industry-ready talent and innovate with industry. Sustainable maritime engineering is a key area of focus for us, and we look forward to working with industry to tackle new challenges including maritime decarbonisation, digitalisation as well as sustainable ship design. We are pleased to collaborate with TCOMS to strengthen Singapore’s R&D efforts in sustainable maritime engineering and to build a pipeline of talent for the industry.”

 

“TCOMS is proud to partner SIT to nurture Singapore’s future engineering talent. As a national R&D centre dedicated to the Maritime, Marine & Offshore Engineering and other Ocean sectors, TCOMS seeks to offer an enriching opportunity to our researchers, academia and students to co-innovate with the industry and solve real world challenges,” said Professor Chan Eng Soon, CEO of TCOMS.

 

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